Manufacturing method for wiring

ABSTRACT

In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure. With the above-mentioned characteristics, efficiency in use of a material is improved, and a reduction in manufacturing cost is realized.

This application is Divisional of U.S. Application No. Ser. 10/769,852filed Feb. 3, 2004 now U.S. Pat. No. 7,189,654.

TECHNICAL FIELD

The present invention relates to a manufacturing method for wiring, acontact hole, and a display apparatus, and more specifically, to amanufacturing method for wiring, a contact hole, and a display apparatusthat uses any one of a manufacturing method for a thin film such as aregistration pattern using an ink droplet jet method (an ink jet method,an ink droplet discharge method), a manufacturing method for a thin filmby a CVD (chemical vapor deposition) method, an evaporation method, or asputtering method, and a local etching treatment method or ashingtreatment method that is performed under the atmospheric pressure or apressure close to the atmospheric pressure. In addition, the inventionrelates to a semiconductor manufacturing apparatus for forming a thinfilm.

BACKGROUND ART

A thin film transistor (TFT), which is formed using a thin film on aninsulating surface, is widely applied for an integrated circuit and thelike and is used as a switching element in many cases. Among theapplications, since the application of a display panel using the TFT hasbeen extended to, in particular, a large display apparatus, demands forhigh definition, a high aperture ratio, high reliability, and anincrease in size of a screen have been increasing.

As a manufacturing method for wiring in such a thin film transistor,there is a method of forming a film of a conductive layer on an entiresurface of a substrate and, thereafter, performing etching treatmentusing a mask. In addition, a lithography technique for forming a film ofa photosensitive resin (photoresist) on a substrate and performingexposure and development using a mask, on which a pattern is drawn, andan ultraviolet ray. A resist pattern formed by this technique is used asa mask in performing etching treatment (see Patent Document 1). (PatentDocument 1) JP-A-2002-359246

In addition, in recent years, spread of a liquid crystal television thatrealizes a reduction in thickness and weight, which is not realized by aCRT television, has been advanced. In realizing an increase in an addedvalue for the liquid crystal television, a screen size is an importantelement. According to a composition ratio by inch in the presentsituation, a screen size of 20 inches or less occupies about 70% of themarket. On the other hand, large liquid crystal televisions of 20 inchesor more, for example, 40 inches have appeared.

Such an increase in a screen size has accelerated an increase in asubstrate size, transmission has progressed to a fourth generation(680×880, 730×920) and a fifth generation (1000×1200), and highdefinition has also progressed with a resolution thereof at VGA(640×RGB×480), SVGA (800×RGB×600), XGA (1024×RGB×768), and SXGA(1280×RGB×1024).

DISCLOSURE OF THE INVENTION

(Problems that the Invention is to Solve)

A film of a resist is often formed using a spin coater that drips liquidof the resist and rotates (spins) a substrate to manufacture the filmwith a centrifugal force of it. In this case, about 95% of the drippedresist scatters at the time of spin coating. Thus, it has been attemptedto devise a material for the resist, a rotation speed of the spin, and away of rotation. However, despite the attempt, about 90% of the resistis wasted. In the case in which a large substrate is used, such aproblem is particularly serious.

In addition, when the spin coating is performed, the resist is coated upto the ends of the substrate. Then, the resist at the ends is scrapedoff and adheres to the substrate at the time of handling the substrate,which leads to a pattern defect. Therefore, a process of edge cleaningfor removing the resist at the ends by an organic solvent is required.In other words, in the case in which the film of the resist is formed bythe spin coating, there is a resist material to be wasted, and theprocess of edge cleaning is added as required.

Further, when a thin film is formed on a substrate using a vacuumapparatus, a special apparatus or equipment for making the inside of achamber vacuum is necessary, which increases manufacturing cost. In thecase in which a large substrate is used, since a size of the chamber isalso increased inevitably, long treatment time is required to evacuatethe inside of the chamber, and a large quantity of a film formation gasis also required.

The present invention has been devised in view of such problems, and itis an object of the invention to provide a manufacturing method forwiring, a contact hole, and a display apparatus with a purpose ofimproving a through put and an efficiency in use of a material to reducemanufacturing cost by using an ink droplet jet method. In addition, itis an object of the invention to provide a manufacturing method forwiring, a contact hole, and a display apparatus, which can cope with anincrease in size of a substrate, by using the plasma treatment methodunder the atmospheric pressure or a pressure close to the atmosphericpressure.

Moreover, it is an object of the invention to provide a semiconductormanufacturing apparatus that is capable of realizing a manufacturingmethod for wiring, a contact hole, and a display apparatus that solvesthe above-mentioned problems.

(Means for Solving the Problems)

In order to solve the problems of the conventional technique, thefollowing means is taken in the invention.

The invention is a manufacturing method for wiring that forms aconductive layer on a substrate having an insulating surface by a CVDmethod, an evaporation method, or a sputtering method, forms a resistpattern, which is in contact with the conductive layer, using a head forjetting a composition containing a photosensitive agent, and afterapplying etching treatment to the conductive layer with the resistpattern as a mask, applies ashing treatment to the resist pattern,characterized in that the resist pattern is formed by scanning the heador the substrate, and the etching treatment or the ashing treatment isperformed by moving plural plasma generating means for scanning, whichare arranged linearly, under the atmospheric pressure or a pressureclose to the atmospheric pressure.

The invention is a manufacturing method for a contact hole that forms asemiconductor layer or a conductive layer on a substrate having aninsulating surface by a CVD method, an evaporation method, or asputtering method, forms an insulated layer on the semiconductor layeror the conductive layer, and applies etching treatment to the insulatedlayer to form a contact hole that reaches the semiconductor layer or theconductive layer, characterized in that the etching treatment isperformed by moving plural plasma generating means for scanning, whichare arranged linearly, under the atmospheric pressure or a pressureclose to the atmospheric pressure.

The invention is characterized in that a display apparatus ismanufactured using one or both of the above-mentioned manufacturingmethod for wiring and the manufacturing method for a contact hole.Examples of the display apparatus include any display apparatus using athin film technique, for example, a liquid crystal display apparatususing a liquid crystal element and a light emitting apparatus using aselfluminous element.

The invention is a semiconductor manufacturing apparatus that includesforming means that forms a conductive layer on a substrate having aninsulating surface by a CVD method, an evaporation method, or asputtering method, ink droplet jetting means that forms a resist patternusing a head for jetting a composition containing a photosensitiveagent, a moving means which moves the substrate and the head, and pluralplasma generating means, which perform etching treatment or ashingtreatment, under the atmospheric pressure or a pressure close to theatmospheric pressure, characterized in that the plural plasma generatingmeans are arranged linearly.

It is characterized in that the conductive layer or the semiconductorlayer is formed by the CVD method, the evaporation method, or thesputtering method, and preferably, formed in a selective manner.Specifically, the semiconductor manufacturing apparatus does not form afilm on an entire surface of a substrate but forms a film only in adesired place in a selective manner by using a mask (metal mask). Forexample, with the evaporation method, the semiconductor manufacturingapparatus does not form a film on an entire surface of a substrate butforms a film only in a desired place in a selective manner by narrowinga supply port for supplying an evaporation source and performingscanning.

The formation of the resist pattern is characterized in that using thehead for jetting a composition containing a photosensitive agent. Thisis a so-called ink droplet jet method (ink jet method) is used, and isperformed by scanning the head or the substrate. With this structure,compared with the case in which a resist pattern is manufactured usingspin coating, efficiency in use of a resist material is improvedremarkably, which leads to a reduction in manufacturing cost. Inaddition, since it is possible to scan one or both of the head and thesubstrate, accuracy is improved, and a film can be formed only in adesired place.

The etching treatment or the ashing treatment is characterized in thatscanning the plural plasma generating means, which are arrangedlinearly, under the atmospheric pressure or a pressure close to theatmospheric pressure. Since vacuum equipment is not required for thetreatment, improvement of productivity and a reduction in manufacturingcost are made possible. In addition, by using the plural plasmagenerating means arranged linearly, it become advantageous in terms oftact time. Preferably, if the plural plasma generating means arearranged linearly so as to have the same length as one side of thesubstrate, the treatment can be finished by performing scanning once.Note that a scanning direction is not limited to a direction parallel tothe one side of the substrate, and the scanning may be performed in anoblique direction.

In addition, it is unnecessary to supply a reactant gas from all theplasma generating means among the plural plasma generating meansarranged linearly, and the treatment can be performed if a predeterminedgas flow is supplied only to a target point. Therefore, the invention,with which it is unnecessary to always supply a reactant gas, leads togas saving and makes it possible to reduce manufacturing cost.

Further, the manufacturing method for a contact hole is characterized inthat plasma is generated only in one or more selected out of the pluralplasma supplying means. In other words, setting is made to make theplural plasma generating means, which are arranged linearly, relativelyscan the substrate and to supply a reactant gas only to a desired placewhere it is desired to form a contact hole. The invention having such astructure improves use efficiency of a gas compared with the case inwhich a reactant gas is supplied to the entire surface, and leads to areduction in manufacturing cost.

The invention having the above-mentioned structure can provide amanufacturing method for wiring, a contact bole, and a display apparatusthat can realize a reduction in space and efficiency of a manufacturingline, contribute to significant improvement of quality, improvement ofproductivity, and a reduction in manufacturing cost in manufacturing ofa display panel, and be better for the earth environment. In addition,since an atmospheric pressure system capable of performing in-linetreatment linked to production is adopted, high-speed and consecutivetreatment is possible. Moreover, since only a necessary quantity ofmaterial has to be used in a desired place, waste of materials becomes alittle. Thus, improvement in efficiency in use of materials and areduction in manufacturing cost are realized.

The invention is a manufacturing method for wiring that forms a resistpattern, which is in contact with a conductive layer on a substrate,using a head for jetting a composition containing a photosensitiveagent, and after applying etching treatment to the conductive layer withthe resist pattern as a mask, applies ashing treatment to the resistpattern, characterized in that the conductive layer is formed by a CVDmethod, a sputtering method, or an evaporation method, the resistpattern is formed by moving the head or the substrate, and the etchingtreatment or the ashing treatment is performed using plasma generatingmeans under the atmospheric pressure or a pressure close to theatmospheric pressure.

The invention is characterized in that a display apparatus ismanufactured using the above-mentioned manufacturing method for wiring.Examples of the display apparatus include any display apparatus using athin film technique, for example, a liquid crystal display apparatususing a liquid crystal element and a light-emitting apparatus using aselfluminous element.

(Advantages of the Invention)

The invention having the above-mentioned structure can provide amanufacturing method for wiring, a contact hole, and a display apparatusthat can realize a reduction in space and efficiency of a manufacturingline, contribute to significant improvement of quality, improvement ofproductivity, and reduction in manufacturing cost in manufacturing of adisplay panel, and be better for the earth environment. In addition,since an atmospheric pressure system capable of performing in-linetreatment linked to production is adopted, high-speed and consecutivetreatment is possible. Moreover, since only a necessary quantity ofmaterial has to be used in a desired place, waste of materials becomes alittle. Thus, improvement in efficiency in use of materials and areduction in manufacturing cost are realized.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing a plasma treatment apparatus.

FIG. 2 is a diagram showing the plasma treatment apparatus.

FIG. 3 is a diagram explaining an ink droplet jet method.

FIG. 4 is a diagram explaining a manufacturing method for wiring.

FIG. 5 is a diagram explaining the manufacturing method for wiring.

FIG. 6 is a diagram explaining a manufacturing method for a contacthole.

FIG. 7 is a diagram explaining an ink droplet jet apparatus.

FIG. 8 is a diagram explaining a manufacturing flow.

FIG. 9 is a diagram explaining a sputtering apparatus.

FIG. 10 is a diagram explaining an evaporation apparatus.

FIG. 11 is a diagram explaining a liquid crystal display apparatus.

FIG. 12 is a diagram showing an electronic device.

FIG. 13 is a diagram showing a manufacturing method for a thin filmtransistor.

FIG. 14 is a diagram showing a sectional structure of the thin filmtransistor.

FIG. 15 is a top view of the thin film transistor.

FIG. 16 is a diagram showing a manufacturing method for a displayapparatus.

FIG. 17 is a diagram showing a plasma treatment apparatus.

FIG. 18 is a diagram showing the plasma treatment apparatus.

FIG. 19 is a diagram showing the plasma treatment apparatus.

FIG. 20 is a diagram showing the plasma treatment apparatus.

FIG. 21 is a diagram showing a manufacturing method for a thin filmtransistor.

FIG. 22 is a diagram showing the manufacturing method for a thin filmtransistor.

FIG. 23 is a diagram showing the manufacturing method for a thin filmtransistor.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment modes of the present invention will be explained in detailusing the drawings. However, the invention is not limited to thefollowing explanation, those skilled in the art will easily understandthat a form and details of the invention can be changed in various wayswithout departing from the spirit and scope of the invention. Therefore,the invention is not interpreted with limitation to describe contents ofthe embodiment mode indicated below. Note that, in a constitution of theinvention explained below, reference numerals and signs denoting samecomponents are commonly used among different drawings.

Embodiment Mode 1

First, as a characteristic of the invention, plasma generating means, inwhich plural electrodes are arranged linearly, is used for scanning toperform etching treatment or ashing treatment under the atmosphericpressure or a pressure close to the atmospheric pressure(6.6×10²-1.1×10⁵Pa). Thus, using FIGS. 1 and 2, an apparatus havingplural cylindrical electrodes, in which a first electrode surrounds asecond electrode and have nozzle-like narrow ports at tips thereof, willbe explained as an example of a plasma treatment apparatus used in thepresent invention.

FIG. 2(A) is a top view of the apparatus, and FIG. 2(B) is a sectionalview of the apparatus. In the figures, an object to be treated 13 suchas a glass substrate and a resin substrate, which is represented by aplastic substrate with a desired size, is set in a cassette chamber 16.As a conveying system for the representative object to be treated 13,there is horizontal conveyance. However, in the case in which asubstrate of a fifth generation or later, which is the representativeobject to be treated 13, is used, vertical conveyance with the substrateplaced vertically may be performed for the purpose of reducing an areaoccupied by a conveyor.

In a conveyance chamber 17, the object to be treated 13 arranged in thecassette chamber 16 is conveyed to a plasma treatment chamber 18 by aconveyance mechanism (robot arm) 20. In the plasma treatment chamber 18adjacent to the conveyance chamber 17, airflow control means 10, plasmagenerating means 12 in which plural cylindrical electrodes are arrangedlinearly, rails 14 a and 14 b for moving the plasma generating means 12,and the like are provided. In addition, publicly-known heating means(not shown) such as a lamp is provided as required.

The airflow control means 10 is provided for the purpose of protectionagainst dusts and performs control of an airflow using an inert gasjetted out from a blowout port 23 for a gas such that the apparatus isshut off from the external air. The plasma generating means 12 moves toa predetermined position with the rail 14 a arranged in a conveyingdirection of the object to be treated 13 and the rail 14 b arranged in adirection perpendicular to the conveying direction.

Now, details of the plasma generating means 12 will be explained usingFIG. 1. FIG. 1(A) shows a perspective view of the, plasma generatingmeans 12, in which the plural cylindrical-electrodes are arrangedlinearly, and FIGS. 1(B) to (D) show sectional views of the cylindricalelectrodes.

In FIG. 1(B), dotted lines indicate paths of a gas, and referencenumerals 21 and 22 denote electrodes consisting of metal havingconductivity such as aluminum or copper. A first electrode 21 isconnected to a power supply (high-frequency power supply) 29. Note thata cooling system (not shown) for circulating cooling water may beconnected to the first electrode 21. When the cooling system isprovided, heating in the case of performing surface treatmentsuccessively is prevented by circulation of the cooling water to make itpossible to improve efficiency by successive treatment. The secondelectrode 22 has a shape surrounding the periphery of the firstelectrode 21 and is grounded electrically. Then, the first electrode 21and the second electrode 22 have a cylindrical shape with nozzle-likenarrow ports for a gas at tips thereof.

Note that it is advisable to cover one or both of the first electrode 21and the second electrode 22 with a solid dielectric. Examples of thesolid dielectric include metal oxides such as aluminum oxide, zirconiumdioxide, and titanium dioxide, organic materials such as polyethyleneterephthalate and polytetrafluoro-ethylene, and oxides such as siliconoxide, glass, and barium titanate. The solid dielectric may be ofsheet-like or film-like, but it is preferable that thickness of thedielectric is 0.05 to 4 mm. This is because, since a high voltage isrequired to generate discharge plasma, if the solid dielectric is toothin, dielectric breakdown occurs at the time of voltage application tocause arc discharge.

A process gas is supplied to a space between the first electrode 21 andthe second electrode 22 by gas supplying means (gas cylinder) 31 via avalve 27. Then, the atmosphere in this space is replaced, and when ahigh-frequency voltage (e.g., 10 to 500 MHz) is applied to the firstelectrodes 21 by the high-frequency power supply 29 in this state,plasma is generated in the space. Then, when a reactive gas flow, whichcontains chemically active excited species such as ion and radicalgenerated by this plasma, is irradiated toward the surface of the objectto be treated 13, predetermined surface treatment can be performed onthe surface of the object to be treated 13. Note that the process gas tobe filled in the gas supplying means (gas cylinder) 31 is appropriatelyselected according to a type of surface treatment to be performed in thetreatment chamber. In addition, an exhaust gas is introduced into anexhaust system 31 via the valve 27. Note that this exhaust gas may bepassed through a filter to remove mixed dusts and refine the exhaust gasfor recycling. By performing recycling in this way, use efficiency of agas can be further improved.

Next, the cylindrical plasma generating means 12 with different sectionswill be explained using FIGS. 1(C) and (D). FIG. 1(C) shows the plasmagenerating means 12 in which the first electrode 21 is longer than thesecond electrode 22 and the first electrode 21 has an acute-angledshape. In addition, FIG. 1(D) shows the plasma generating means 12 thathas a shape for jetting an ionized gas flow that occurs between thefirst electrode 21 and the second electrode 22. In this way, the shapeof plasma generating means is not specifically limited but may have anyshape.

In the invention using the plasma treatment apparatus that is operatedunder the atmospheric pressure or a pressure close to the atmosphericpressure, time for vacuuming and air opening necessary for adecompression device is not required, and it is unnecessary to arrange acomplicated vacuum system. In particular, in the case in which a largesubstrate is used, a chamber is also increased in size inevitably, andlong treatment time is required if the inside of the chamber is broughtinto a decompressed state. Therefore, the invention using thisapparatus, which is operated under the atmospheric pressure or apressure close to the atmospheric pressure is effective and it ispossible to reduce manufacturing cost.

The apparatus having a characteristic in using the plasma generatingmeans 12 in which the plural cylindrical electrodes are arrangedlinearly can perform plasma treatment by performing scanning only once.Thus, the apparatus is particularly effective for a large substrate.Moreover, the apparatus only has to perform the treatment only for anecessary place and stop supply of a gas in an unnecessary place byscanning with the plasma generating means 12. Thus, efficiency of use ofa gas to be used is improved to make it possible to reduce manufacturingcost.

In other words, the plasma treatment apparatus used in the inventionscans the object to be treated 13 or the plasma generating means 12while maintaining a distance between the object to be treated 13 and theplasma generating means 12 constant and applies plasma treatment to thesurface of the object to be treated 13. Therefore, the invention usingthe plasma generating means 12 in which the plural cylindricalelectrodes are arranged in one axial direction can reduce the number oftimes of scanning the object to be treated 13 or the plasma generatingmeans 12. Thus, it is effective in the case in which a large substrateis used as the object to be treated 13.

In the case in which etching treatment is applied to the surface of theobject to be treated 13 using the above apparatus, the etching treatmentis performed by supplying a material gas of NF₃, CF₄ (carbontetrafluoride), SF₆, or Co_(x), and a mixed gas of one of hydrogen andoxygen and a rare gas to the plasma generating means 12 from the gassupplying means 31 to generate plasma. For example, fluorine atoms aregenerated using a material gas of NF₃ or SF₆, and the fluorine atomsreact with solid silicon to be vaporized as a volatile SiF₄ gas andexhausted to the outside, whereby the etching treatment is performed. Inaddition, in the case in which ashing treatment is applied to thesurface of the object to be treated 13, the ashing treatment isperformed by supplying a material gas of oxygen and one of hydrogen,CF₄, NF₃, H₂O, and CHF₃ to the plasma generating means 12 from the gassupplying means 31 to generate plasma. For example, the ashing treatmentfor a photosensitive organic resist is performed by introducing oxygenand carbon tetrafluoride and changing into CO₂, CO, and H₂O to exfoliatethe resist.

Note that formation of a thin film by the plasma CVD method may beperformed, and formation of not only an insulating film but also aconductive film of metal or the like may be performed using the aboveapparatus. In addition, cleaning treatment for components may beperformed, and in particular, cleaning treatment for the electrodes 21and 22 may be performed with plasma using a gas of NF₃, CF₄ (carbontetrafluoride), SF₆, Co_(x), or the like, and O₂, in the case of anorganic material.

In addition, the invention is characterized in that a resist pattern isformed by the ink droplet jet method. More specifically, a resistpattern, which is in contact with the conductive layer, is formed usingone head for jetting a compound containing a photosensitive agent. Inthis case, the invention is characterized in that the resist pattern isformed by moving the head or a substrate for scanning. Thus, themanufacturing method for wiring of the invention using the plasmatreatment method, which is performed under the atmospheric pressure or apressure close to the atmospheric pressure, and this ink droplet jetmethod will be hereinafter explained.

First, a material such as glass, quartz, a semiconductor, plastics, aplastic film, metal, glass epoxy resin, or ceramics is formed as asubstrate 101 (FIG. 3(A)). As a material for the substrate 101, anymaterial may be used as long as the material can withstand treatmenttemperature in a manufacturing process of the invention.

Subsequently, conductive films 102 a to 102 c (hereinafter generallyreferred to as conductive films 102) are formed on the substrate 101 ina selective manner. Note that, although a state in which a base film hasalready been formed on the substrate 101 or a state in which asemiconductor element such as a transistor and an insulating film havealready been formed may be acceptable, it is assumed here that theconductive films 102 are formed on the substrate 101 for convenience ofexplanation.

Further, the invention is characterized by performing formation of theconductive films 102 by the CVD method, the evaporation method, or thesputtering method in a selective manner. In other words, the presentinvention is characterized in that, conductive films are formed only inplaces, where wiring is formed later, in a selective manner, not formingthe conductive films 102 on the entire surface of the substrate 101. Inthe invention having the above-mentioned structure, use efficiency of amaterial used as wiring is improved, which makes it possible to reducemanufacturing cost.

In the case in which the conductive films 12 are formed by the CVDmethod, a source gas, a reaction temperature, and a reaction pressureare set appropriately. For example, in the case in which a tungsten (W)film is formed, WF₆ is used as the source gas, and the reactiontemperature is set to 200 to 500° C. In addition, in the case in whichan aluminum (Al) film is formed, a method of decomposing an organiccompound at relatively low temperature is mainly adopted. (C₄H₉)₃Al isused as the source gas, the reaction temperature is set to 250 to 270°C., and temperature of a gas is thermally activated in a course ofintroduction to form the film. In addition, in the case in which acopper (Cu) film is formed, an organic compound containing copper isused as the source gas, and the reaction temperature is set to 100 to300° C. to form the film with thermal decomposition. Note that, since itis necessary to form a film under decompression depending upon a type ofa thin film to be formed, the reaction pressure is set to apredetermined pressure in that case.

In the case in which the conductive films 102 are formed by theevaporation method, examples of a representative source includeelectrification heating, an electron beam, a hollow cathode, and laserablation. However, it is likely that composition change occurs in themethods other than the laser ablation. Therefore, in order to form analloy film, it is advisable to use a method such as a flash evaporationmethod that granulates the alloy material and evaporates each granuleinstantaneously. In the case in which the conductive films 102 areformed by the evaporation method in a selective manner, a supply port ofan evaporation source is reduced, and the evaporation source or asubstrate is moved for scanning.

In the case in which the conductive films 102 are formed by thesputtering method, a system according to contrivance of an electrodesuch as bipolar sputtering or magnetron sputtering or a system accordingto contrivance of an operation method for sputtering such ashigh-frequency sputtering may be used. As a method of forming theconductive films 102 with the sputtering method in a selective manner,referring to the dipole sputtering as an example, there is a method ofadopting a structure in which two electrodes are set vertically and asquare plate-like target is placed between the two electrodes. In thiscase, by setting an area of target itself, which is opposed to an objectto be treated, small, the conductive films 102 can be formed in aselective manner.

Note that, although the case in which conductive films are formed in aselective manner is described in the above-mentioned three methods, theinvention is not limited to this. Conductive films may be formed in aselective manner by using a metal mask together with the method offorming conductive films over the entire surface. In this case, althoughefficiency in use of a material for wiring is not improved, it isunnecessary to apply etching treatment to all places of a thin filmother than a place coated with a resist pattern and only a desired placehas to be subjected to the etching treatment in an etching treatmentprocess to be performed later. Therefore, waste of a gas to be used atthe time of the etching treatment is reduced, and efficiency of use of agas is improved.

Subsequently, a photoresist (photosensitive resin) reactive to anultraviolet ray is formed on the conductive films 102 with the inkdroplet jet method to form resists 104 to 106 (FIG. 3(B)). Morespecifically, a compound containing a photosensitive agent is jettedfrom ahead 103 to form the resists 104 to 106 on the conductive films102.

A top view at this point is shown in FIG. 5(A). The head 103 can scanvertically and horizontally in a state in which the head 103 is parallelto the surface of the substrate 101. Note that, although one head 103 isshown in FIGS. 5(A) and (B), plural (e.g., three) heads 103 may be usedas shown in FIG. 5(C). In addition, it is also possible that pluralheads with different nozzle diameters are prepared, and the heads withdifferent diameters are chosen according to an application. In the casein which the plural heads 103 are used, the beads 103 may scan inparallel with a row direction and a column direction of the substrate101 or may scan in an oblique direction with respect to the rowdirection and the column direction of the substrate 101. In addition,the head 103 may scan the same place plural times to apply an inkrepeatedly. Moreover, although it is preferable to perform scanning withthe head 103, the substrate 101 may be moved. It is advisable that whichof the head 103 and the substrate 101 should be moved is decidedaccording to accuracy of the movement and an application. Note that itis preferable to provide the substrate 101 and the head 103 as close aspossible in order to drip ink on a desired place, and it is preferablethat a distance between the substrate 101 and the head 103 is set to,specifically, 3 millimeters or less, preferably, 1 millimeter or less,and more preferably, 0.5 millimeters or less. Since this accurate jet ofan ink droplet also depends upon the distance, it is also possible thata sensor or the like for measuring a distance is used such that thisdistance can be retained accurately.

Note that, although the conductive film 102 is formed by the CVD method,the evaporation method, or the sputtering method in a selective manner,FIG. 5(A) shows, in a simplified manner, the case in which theconductive film 102 is formed over the entire surface on the substrate101.

As a compound to be jetted from the head 103, a compound containing aphotosensitive agent only has to be used. For example, a compoundobtained by dissolving or dispersing novolac resin serving as arepresentative positive resist and naphthoquinone-azide compound servingas a photosensitive agent, base resin serving as a negative resist,diphenylsilanediol and an acid generating agent, or the like in asolvent is used. As the solvent, esters such as butyl acetate or ethylacetate, alcohols such as isopropyl alcohol or ethyl alcohol, andorganic solvents such as methyl ethyl ketone, or acetone are used. It isadvisable to set concentration of the solvent appropriately according toa type or the like of a resist.

In addition, as a material other than the above, the compound to bejetted from the head 103 may be a resin material such as epoxy resin,acrylic resin, phenol resin, novolac resin, acrylic resin, melamineresin, or urethane resin. Note that, in the case in which these resinmaterials are used, viscosity thereof is adjusted by dissolving ordispersing the resin material using a solvent.

It is preferable that an amount of a compound to be jetted at a timefrom the head 103 is 10 to 70 pl (more widely, 0.001 to 100 pl), andviscosity is 100 cp or less, and a particle diameter is 0.1 μm or less(more widely, 1 μm or less) and it is more preferable that a nozzlediameter is 5 to 100 μm (more widely, 0.01 to 100 μm). This is for thepurpose of preventing drying from occurring and because, if theviscosity is too high, a compound cannot be jetted from the ink jet portsmoothly. Viscosity, surface tension, drying speed, and the like of thecompound are adjusted properly according to a solvent to be used and anapplication. In addition, it is preferable that the compound to bejetted from the head 103 drips successively on the substrate to beformed linearly or in a stripe shape. However, the compound may bedripped for each predetermined place, for example, for each dot.

In addition, the formation of a resist pattern by the ink droplet jetmethod is processed under the atmospheric pressure and underdecompression (including a pressure close to the atmospheric pressureand vacuum). “Under decompression” means a pressure lower than theatmospheric pressure, in the atmosphere filled with nitrogen, a raregas, or other inert gases, for example, 1×10² to 2×10⁴ Pa (preferably,5×10² to 5×10³ Pa) is sufficient. In the higher vacuum (underdecompression), 1 to 5×10⁴ Pa (1×10² to 1×10³ Pa) is sufficient. Underdecompression, a solvent always volatilizes from a droplet and a volumeof the droplet decreases until the droplet reaches a thin film on asubstrate. Therefore, the heating process to be performed later can beperformed in a shorter time as required.

Then, when formation of the resist patterns 104 to 106 ends, pre-baketreatment for baking a resist pattern at about 100° C. is performed forthe purpose of hardening a resist. In this beating treatment, a lampanneal apparatus, which directly heats a substrate at high speed using alamp such as halogen as a heating source, or a laser irradiationapparatus, which irradiates a laser beam, is used. Both the apparatusescan apply heating treatment only to a desired place by using the heatingsource for scanning. However, in the case in which a laser beam is used,it is preferable that a shape of a beam spot of a laser beam, which isemitted from a laser oscillator, is formed linearly such that a lengthof a column or a row is the same as a length of one side of a pattern.Then, laser irradiation can be finished by performing scanning once. Asanother method, a furnace anneal oven, which is set to a predeterminedtemperature, may be used.

Next, exposure treatment is performed (FIG. 3(C)). The exposuretreatment is a treatment for laying a mask (photo mask) 107, in which atarget pattern is written in advance, over the resists 104 to 106 andirradiating an ultraviolet ray from above the mask 107. In thistreatment, an entire surface of a substrate is divided by every severalparts and a light source such as an ultraviolet ray lamp is used toirradiate light of a photosensitive wave length area of a photosensitiveagent.

Subsequently, development treatment for immersing the resists of parts,on which the ultraviolet ray was irradiated by the exposure, in adevelopment liquid to remove the resists is performed to change thepattern baked by the exposure into actual resist patterns 108 to 110(FIG. 4(A)). Then, post-bake treatment for baking the resist patterns atabout 120° C. is performed.

Next, etching treatment is applied to the film of parts not covered bythe resist patterns 108 to 110 using the plasma generating means 118 toremove the film (FIG. 4(B)). The invention is characterized byperforming dry etching treatment using plasma under the atmosphericpressure or a pressure close to the atmospheric pressure. An etching gasonly has to be selected appropriately according to an object to beprocessed, and the etching treatment is performed using a fluorineetching gas such as CF₄, NF₃, or SF₆ or a chlorine etching gas such asCl₂ or BCl₃. In this embodiment mode, utilizing the fact that a resistwhich is an organic material is also etched using a gas mixed withoxygen, a conductive layer is etching in a taper shape to formconductive layers 112 to 114 and resist patterns 115 to 117.

Finally, ashing treatment is applied to the resist patterns 115 to 117using the plasma generating means 118 to remove the resist patterns(FIG. 4(C)). The present invention is characterized by using a plasmaasher that causes a gas in a form of plasma and a resist to react witheach other at the atmospheric pressure or a pressure close to theatmospheric pressure to vaporize and remove the resist. Note that, inthe plasma asher, an oxygen gas is generally used, and since the resistis a solid object consisting of carbon, oxygen, and hydrogen, the plasmaasher utilizes a phenomenon in which the resist changes to a gas such asCO₂, H₂O, or O₂ when the resist chemically reacts with oxygen plasma.Note that, in the case in which this plasma asher is used, sinceimpurities such as heavy metal contained in an actual resist are notremoved, the resist may be cleaned in a wet station.

The present invention is characterized in that the etching treatment andthe ashing treatment are performed by scanning with plural plasmagenerating means arranged linearly. Vacuum equipment is not required inthe treatments, which makes it possible to improve productivity andreduce manufacturing cost. In addition, it is advantageous in terms oftact time by using the plural plasma generating means arranged linearly.Preferably, if the plural plasma generating means are arranged linearlyso as to have the same length as one side of the substrate, thetreatment can be finished by performing scanning once. Note that ascanning direction is not limited to a direction parallel to the oneside of the substrate, and the scanning may be performed in an obliquedirection.

In addition, it is unnecessary to supply a reactant gas from all theplasma generating means among the plural plasma generating meansarranged linearly, and the treatment can be performed if a predeterminedgas flow is supplied only to a target point. Therefore, the invention,with which it is unnecessary to always supply a reactant gas, leads tosaving of a gas and makes it possible to reduce manufacturing cost.

Patterns of the conductive layers 112 to 114 can be formed on thesubstrate 101 as described above. Note that it is preferable to form thepatterns of the conductive layers 112 to 114 at 5 to 50 μm in the caseof gate wiring (capacitive wiring) and 5 to 25 μm in the case of sourcewiring. In this embodiment mode, one form of forming a patternconsisting of a conductive material on the substrate 101 is indicated asan example in this embodiment mode. However, the invention is notlimited to this but can be applied to various fields such as a wiringformation process for a semiconductor integrated circuit and a wiringformation process for a TFT substrate constituting a liquid crystalpanel or an EL panel. In other words, the present invention is notlimited to the example in this embodiment mode but wan also be appliedin the case of forming a pattern of an insulating film such as siliconoxide or acrylic resin and a semiconductor such as polysilicon oramorphous silicon.

Embodiment Mode 2

An embodiment mode of the invention will be explained using thedrawings. In this embodiment mode, a form of performing etchingtreatment in a selective manner using the above-mentioned plasmatreatment apparatus to manufacture an aperture (contact hole) will beexplained.

In FIG. 6(A), a semiconductor layer (or a conductive layer or a wiringlayer) 125 is formed on the substrate 101 and an insulating film 126 isformed on the semiconductor layer 125 by a publicly-known method. Then,resist patterns 127 and 128 are formed on the insulating film 126 inplaces other than a place where an aperture is to be formed. When thesubstrate 101 comes into this state, etching treatment is performed bythe plasma supplying means 12. Then, as shown in FIG. 6(B), a contacthole 129 reaching the semiconductor layer 125 can be formed. Thiscontact hole has a size of about 2.5 to 30 μm depending upon a diameterof the plasma supplying means 12 or resolution of a display panel to beused.

This embodiment mode is characterized in that the etching treatment isperformed by using plural plasma generating means arranged linearly forscanning under the atmospheric pressure or a pressure close to theatmospheric pressure, and plasma is generated only in one or more plasmasupplying means selected out of the plural plasma supplying means. Sincevacuum equipment is not required in the treatment, the treatment makesit possible to improve productivity and reduce manufacturing cost. Inaddition, it is advantageous in terms of tact time by using the pluralplasma generating means arranged linearly. Preferably, if the pluralplasma generating means are arranged linearly so as to have the samelength as one side of the substrate, the treatment can be finished byperforming scanning once. Note that a scanning direction is not limitedto a direction parallel to the one side of the substrate, and thescanning may be performed in an oblique direction.

In addition, it is unnecessary to supply a reactant gas from all theplasma generating means among the plural plasma generating meansarranged linearly, and the treatment can be performed if a predeterminedgas flow is supplied only to a target point. Therefore, the invention,with which it is unnecessary to always supply a reactant gas to all theplasma supplying means, improves efficiency in use of a gas and makes itpossible to reduce manufacturing cost.

Another example of the invention is shown in FIG. 6(C) to FIG. 6(E).

After forming an interlayer insulating film in an island shape in aselective manner with the ink jet method (ink droplet jet method),plasma treatment is performed in a selective manner to adjust a shape ofthe insulating film, whereby the interlayer insulating layer having acontact hole is formed. The invention is characterized in that theinterlayer insulating film is formed by the ink jet method.

First, as in FIG. 6(A), the semiconductor layer or the wiring layer(conductive layer) 125 is formed on the substrate 101. Here, the wiringlayer 125 consisting of metal will be explained as an example. Asolution containing a polymeric material (representatively, polyimide,acrylic, benzocyclobutene, etc.) is jetted and applied to apredetermined position of the substrate 101 by the ink jet method, andbaking is performed to remove a solvent to form an insulating layer 130a (FIG. 6(C)). Through this process, a part of the wiring layer 125 isexposed. The exposed part is a place that becomes a contact hole later.Note that, since a thickness is required to some extent in order tocause the insulating film 120 a as an interlayer insulating film, adesired thickness may be obtained by repeating jetting and applicationand preliminary baking (or baking) of the solution.

In addition, as a material of the insulating layer 130 a, aphotosensitive or non-photosensitive organic material (polyimide,acrylic, polyamide, polyimide-amide, resist, or benzocyclobutene),lamination of these materials, or the like can be used appropriately.Further, as the insulating layer 130 a, both of a negative dielectriclayer, which becomes soluble with respect to an etchant due tophotosensitive light, or a positive dielectric layer, which becomessoluble with respect to an etchant due to light, can be used.

Since a material is not applied over an entire surface of a substrate asin the spin coat method, the invention can save the materialsignificantly.

Subsequently, as shown in FIG. 6(D), an end of the insulating layer 130a is etched in a selective manner by the plasma treatment using theplasma supplying means (nozzle) 12 to form a contact hole in theinsulating layer 130 a. This etching also servers as treatment foradjusting a shape of the insulating layer 130 a. The contact hole isformed by enlarging a hole, which is opened in the insulating layer 130a in advance, and an insulating layer 130 b is formed. Since parts to beetched are less compared with etching of the conventionalphotolithography, the contact hole can be formed in a short time. Sinceetching is not performed using a resist mask, the invention can leaveout a resist formation process.

In addition, in the case in which dusts such as an impurity are presentsimultaneously in a part where the wiring layer 125 is exposed, thedusts can also be removed. Further, in the case in which a natural oxidefilm is formed in the part where the wiring layer 125 is exposed, thenatural oxide film can also be removed.

Subsequently, wiring 131 is formed as shown in FIG. 6(E). Note that theinsulating layer 130 b functions as an interlayer insulating film. Ifwiring is formed by the ink jet method, a mask-less process can berealized, which can be a process suitable for mass production.

It is possible to combine the embodiment mode with the above-mentionedembodiment mode freely.

Embodiment Mode 3

First, as a characteristic of the invention, etching treatment or ashingtreatment is performed under the atmospheric pressure or a pressureclose to the atmospheric pressure. Thus, an example of a plasmatreatment apparatus, which is used in the invention, will be explainedusing the drawings.

In FIG. 17(A), plasma supplying means has a nozzle 92 formed of glass orquartz glass. Further, a first electrode (high-frequency electrode) 88,which is connected to a high-frequency power supply 89, and a groundedsecond electrode (ground electrode) 87 are arranged to be opposed toeach other in a lower part of the nozzle 92, and a high-frequencyvoltage is applied between the first electrode 88 and the secondelectrode 87.

Gas supplying means (gas cylinder) 85 is connected to the nozzle 92 viaa valve 86. A predetermined gas is supplied to this gas supplying means85 via the valve 86. A stage 91 consisting of a stainless plate or thelike is disposed under the nozzle 92, and an object to be treated 90, onwhich a gas flow in a form of plasma is irradiated, is arranged on anupper surface of this stage 91.

Then, for example, an appropriate amount of oxygen gas or tetrafluoriccarbon gas or oxygen gas and tetrafluoric carbon gas are added to a raregas, and an obtained gas is supplied to the nozzle 92 in an atmosphericstate as a discharge gas, while a high-frequency voltage is applied tothe first electrode 88. Consequently, plasma is generated between boththe electrodes. Then, when a reactive gas flow, which containschemically active excited species such as ion and radical generated bythis plasma, is irradiated toward the surface of the object to betreated 90, predetermined surface treatment can be performed on thesurface of the object to be treated 90.

Subsequently, a perspective view of the plasma treatment apparatus shownin FIG. 17(A) is shown in FIG. 17(B). Walls of the nozzle 92 arearranged in parallel to be opposed to each other, and a gas flow path isformed in a gap thereof. Further, the first electrode 88 (not shown)connected to the high-frequency power supply 89 is disposed along alongitudinal direction of the nozzle 92, and the second electrode 87 isdisposed so as to be opposed to the first electrode 88. Fin plates 94and 95 perpendicular to the nozzle 92 are provided at a lower end of thenozzle 92. Note that gas control means (not shown), which has pluralsupply holes along the gas flow path and is used for supplying thedischarge gas to the gas flow path uniformly, is provided in an upperpart of the nozzle 92. In addition, sides of the gas flow path arecovered by side plates (not shown) such that a reactive gas flowgenerated in the gas flow path can be jetted only from the lower part ofthe gas flow path.

The plasma treatment apparatus used in the invention having theabove-mentioned structure can generate linear discharge and can performpredetermined ashing treatment or etching treatment by irradiating areactive gas flow due to plasma generated by this discharge on theobject to be treated 90.

In addition, a plasma treatment apparatus with a structure differentfrom that of FIG. 17 will be explained using the drawings. FIG. 18(A) isa top view of the plasma treatment apparatus in accordance with theinvention, and FIG. 18(B) is a sectional view. In FIGS. 18(A) and (B),an object to be treated 12 a such as a glass substrate, a resinsubstrate, or a semiconductor substrate, which are subjected to surfacetreatment, is set in a cassette chamber 21 a. As the object to betreated 12 a, a substrate of a desired size is used. Note that it ispreferable to apply pre-treatment such as cleaning to a substrate to beset in the cassette chamber 21 a.

Reference sign 22 a denotes a conveyance chamber, which conveys theobject. to be treated 12 a arranged in the cassette chamber 21 a to aplasma treatment chamber 23 a with a conveyance mechanism 20 a (e.g.,robot arm). As a conveying system for the object to be treated 12 a,there is horizontal conveyance. However, in the case in which asubstrate of a fifth generation or later is used as the object to betreated 12 a, vertical conveyance with the substrate placed verticallymay be performed for the purpose of reducing an area occupied by aconveyor. In a plasma treatment chamber 23 a adjacent to the conveyancechamber 22 a, airflow control means 18 a, which creates a flow of air soas to block the external air for dustproof and also performs conveyanceof the object to be treated 12 a, heating means 19, and plasmagenerating means 25 are provided. The heating means 19 only has to usepublicly-known heating means such as a halogen lamp and heats the objectto be treated 12 a from a lower surface thereof. Reference sign 18 adenotes airflow control means, and reference numeral 26 denotes ablowout port for a gas, which controls an airflow using a conveying gassuch as an inert gas supplied from the gas supplying means 29. Since theplasma treatment apparatus used in the invention is operated under theatmospheric pressure or a pressure close to the atmospheric pressure,contamination from the outside and backflow of a product of reaction canbe prevented simply by controlling an airflow near the plasma generatingmeans 25 with the airflow control means 18 a. In other words, it is alsopossible to perform separation from the outside only with the airflowcontrol means 18 a, and it is unnecessary to completely close the plasmatreatment chamber 23 a. In addition, in the present invention, time forevacuation and air opening necessary for a decompression device is notrequired, and it is unnecessary to arrange a complicated vacuum system.

In addition, a gas supplied from the gas supplying means 29 is heated,to a desired temperature (e.g., 50 degrees to 800 degrees) by a heatingmeans 28, and the object to be treated 12 a is heated-by blowing theheated gas to the object to be treated 12 a. The heating means 28 is notspecifically limited, and any publicly-known heating means may be usedas long as the heating means can heat a gas. In the invention, theheated gas is blown to an upper surface of the object to be treated 12a, and a lower surface of the object to be treated 12 a is furtherheated by the heating means 19. The object to be treated 12 a is heateduniformly by heating both the surfaces of the object to be treated 12 a.In addition, an inert gas only has to be used as the conveying gas to besupplied from the gas supplying means 29.

The plasma generating means 25 is constituted by a first electrode 13 aand a second, electrode 14 a and is connected to a high-frequency powersupply 17 a, an exhaust system, gas supplying means, and the like (FIG.18). The object to be treated 12 a, which has been subjected topredetermined surface treatment in the plasma treatment chamber 23 a, isconveyed to a conveyance chamber 24 and conveyed to another treatmentchamber from this conveyance chamber 24.

Note that it is advisable to cover one or both of the first electrode 13a and the second electrode 14 a with a solid dielectric. Examples of thesolid dielectric include metal oxides such as aluminum oxide, zirconiumdioxide, and titanium dioxide, organic materials such as polyethyleneterephthalate and polytetrafluoro-ethylene, and oxides such as siliconoxide, glass, and barium titanate. It is preferable that thickness ofthe solid dielectric is 0.05 to 4 mm. This is because, since a highvoltage is required to generate discharge plasma, if the soliddielectric is too thin, dielectric breakdown occurs at the time ofvoltage application to cause arc discharge.

Subsequently, a detailed structure of the plasma generating means 25will be explained using a sectional view of FIG. 19. Dotted lines inFIG. 19, indicate paths for a gas. Reference numerals 13 a and 14 adenote electrodes comprising metal having conductivity such as aluminum,copper, or stainless steel, and the first electrode 13 a is connected tothe power supply (high-frequency power supply) 17 a. Note that a coolingsystem (not shown) for circulating a cooling water may be connected tothe first electrode 13 a. By providing the cooling system, it becomespossible to prevent heating in the case in which surface treatment isperformed consecutively by circulation of the cooling water to improveefficiency by consecutive treatment. The second electrode 14 a has ashape surrounding the periphery of the first electrode 13 a and iselectrically grounded. Then, the first electrode 13 a and the secondelectrode 14 a have a cylindrical shape with a nozzle-like gas supplyport at tips thereof. A gas heated by the heating means 28 is suppliedto a space between both the first electrode 13 a and the secondelectrode 14 a. Then, the atmosphere in this space is replaced, and ahigh-frequency voltage (e.g., 10 to 500 MHz) is applied to the firstelectrode 13 a by the high-frequency power supply 17 a in this state togenerate plasma 11 in the space. A reactive gas flow, which containschemically active excited species such as ion and radical generated bythis plasma 11, is irradiated toward the surface of the object to betreated 12 a, whereby surface treatment such as formation of a thin filmand cleaning on the surface of the object to be treated 12 a isperformed.

In addition, in FIG. 19, reference numeral 27 denotes valves; 28 denotesheating means; 29, 30 a, and 31 a denote gas supplying means; 32 denotesan exhaust gas; and 33 denotes a filter. The heating means 28 heats agas supplied by the gas supplying means 9, 30 a, and 31 a to a desiredtemperature (e.g., 50 to 800 degrees). Note that reference numeral 29denotes gas supplying means for a conveying gas; 30 a denotes a gassupplying means for refined gas; and 31 a denotes a gas supplying meansfor a process gas. As the conveying gas, a gas, which does not affectsurface treatment performed in a treatment chamber, such as an inert gasis used. In addition, the process gas is set appropriately according toa type of the surface treatment performed in the treatment chamber. Theexhaust gas 32 is introduced into the filter 28 via the valves 27. Thefilter 28 removes dusts mixed in the exhaust gas. Then, the gas refinedby the filter 33 is introduced into the gas supplying means 30 a forrefined gas again and used as a process gas again.

In addition, as described above, the object to be treated 12 a isfloated horizontally by a gas blown in an oblique direction and avertical direction from the airflow control means 18 a and a gas fromthe space between both the electrodes and is conveyed in a direction ofprogress in a non-contact state. Near the electrodes, a gas blows outupward, and the object to be treated 12 a is lifted by this gas. Inaddition, near the airflow control means 18 a, blowing of a gas andsuction of a gas are performed simultaneously to control height to whichthe object to be treated 12 a is lifted. Moreover, horizontal accuracyof the object to be treated 12 a is adjusted according to a flow rate ofa gas using the valves 27 to adjust a distance between the object to betreated 12 a and the first and the second electrodes 13 a and 14 aprecisely. With this structure, even for the large and thin object to betreated 12 that is hard to be conveyed, a situation in which the objectto be treated 12 is distorted, warps, or in the worst case, cracked isprevented.

In addition, unlike FIG. 18 referred to above, as shown in FIGS. 20(A)and (B), the object to be treated 12 a may be conveyed using airflowcontrol means 18 and mechanical robot arms (conveyance mechanisms) 51.Then, the object to be treated 12 a can be conveyed horizontally to theprogress direction. In addition, rather than the robot arms 51, a rail53 may be set in the direction of progress of the object to be treated12 a as shown in FIG. 20(C) to convey the object to be treated 12 ahorizontally using a truck 52 traveling on the rail 53.

Embodiments Embodiment 1

Embodiments of the invention will be explained using the drawings.

FIG. 7 shows an ink droplet jet apparatus using an ink droplet jetmethod. When a predetermined resist pattern is formed on a substrate 215using the apparatus, a period for jetting a compound from a head (inkhead) 201 and a moving speed of the substrate 215 are adjusted. Notethat a nozzle 202, which blows out a gas, may be provided adjacent tothe head 201, as smoothing means for a compound. The compound jetted onthe substrate 215 is smoothed by the gas blown out from this nozzle 202.In other words, the head 201 or the substrate 215 is moved while keepinga distance between the head 201 and the substrate 215, whereby a linearpattern is formed. At this point, the pattern can be smoothed by blowingout the air from the nozzle 202. In addition, in order to improveaccuracy of a position of impact of the jetted compound, it ispreferable to bring a space between the head 201 and the substrate 215close to 1 millimeter or less. For this purpose, a moving mechanism 204,with which the head 201 moves up and down, and control means 203therefor are provided such that the head 201 is brought close to thesubstrate 215 only at the time of pattern formation.

Besides, the apparatus fixes the substrate 215 and makes the substrate215 movable in an XYθ direction and is constituted by a substrate stage205 that fixes the substrate 215, means 206 that supplies a compound tothe head 201, means 207 that supplies a gas to the nozzle 202, and thelike. A housing 210 covers the head 201, the substrate, stage 205, andthe like. In addition, when the apparatus is used, if the same gas as asolvent of a compound is supplied by the gas supplying means 208 and ashower head 209 provided inside the housing 210 to replace theatmosphere, drying can be prevented to some extent, and printing can becontinued for a long time. Besides, as incidental elements, theapparatus may include a carrier 212 that holds the substrate 215 to betreated, conveying means 211 that conveys the substrate 215 into and outof the carrier 212, a clean unit 213 that blows out clean air to reducedusts in a work area, and the like.

FIGS. 5(D) and (E) show sectional views of the head 103. Two methods ofjetting a compound from the head 103 will be explained using thedrawings. In FIGS. 5(D) and (E), reference numeral 121 denotes acompound and 122 denotes a head. First, as a first method, FIG. 5(D)shows a case in which a method of forming a pattern without stoppingjetting of the compound 121 from the head 103, that is, by consecutivelyjetting the compound 121 is applied. In addition, as a second method,FIG. 5(E) shows a case in which a method of dripping the compound fromthe head 103 to form a pattern is applied. In the present invention,either of the methods may be used.

Subsequently, described is a flow passing through a film formationchamber 225 in which a conductive layer is mainly formed, an ink dropletjet treatment chamber 227 in which the apparatus of FIG. 7 isincorporated, a laser irradiation chamber 228, a treatment chamber forexposure 225, a cleaning chamber 238, and a plasma treatment chamber 237in order.

The respective treatment chambers, which are passed through when asemiconductor apparatus is manufactured, will be explained using FIG. 8.

An exhaust pump is provided in the respective treatment chambers asrequired. As the exhaust pump, an oil rotary pump, a mechanical boosterpump, a turbo molecular pump, or a cryopump can be used. However, thecryopump effective for removing moisture is preferable.

A film formation chamber 225 performs selective processing locally usingmainly a conductive material and using the CVD method, the evaporationmethod, or the sputtering method. In other words, a sputtering apparatus(FIG. 9), an evaporation apparatus (FIG. 10), or the like to bedescribed later is provided in the film formation chamber 25.

The ink droplet jet treatment chamber 227 is characterized by performingformation of a resist pattern. The ink droplet jet treatment chamber 227is constituted as shown in FIG. 7, and one or plural heads shown inFIGS. 5(B) and (C) are provided therein. Further, the ink droplet jettreatment chamber 227 performs formation of a resist pattern by scanninga head or a substrate.

The laser irradiation chamber 228 is used for an application such asheating treatment. The laser irradiation chamber 228 has positioncontrol means having a substrate placed thereon and controlling aposition of the substrate, a laser oscillator 230, an optical system229, a computer including both a central processing unit and storingmeans such as a memory, and the like.

The treatment chamber for exposure 225 is used when exposure treatmentis performed after a resist pattern is formed by the ink droplet jettreatment chamber 227. A treatment unit 239 for irradiating light in aphotosensitive wavelength range of a photosensitive agent on the resistpattern is provided in the treatment chamber for exposure 225. As thelight in a photosensitive wavelength range of a photosensitive agent, ingeneral, light with a wavelength of 350 to 450 nm is required dependingupon a photosensitive agent. As preferred example of a light sourcesatisfying the wavelength range, there is a super-high pressure mercurylamp that is generally used as a light source for a one to oneprojection exposure apparatus of multiwavelength light and a one to oneprojection exposure apparatus of single wavelength light. The lightsource is constituted to irradiate multiwavelength light consisting of ag ray (436 nm), an h ray (405 nm), and an i ray (365 nm) that arespectra of the light of the super-high pressure mercury lamp. Thetreatment unit 239 is constituted by an optical filter, the super-highpressure mercury lamp serving as the light source, a power supply linefor supplying power to a super-high pressure mercury lamp 405, and thelike. Examples of the optical filter include an absorption filter and athin film interference filter. The absorption filter and the thin filminterference filter are stacked appropriately to subject multiwavelengthlight consisting of the g ray (436 nm), the h ray (405 nm), and the iray (365 nm) to spectral transmission. Note that a treatment time forlight irradiation is not as strict as in an exposure time in an exposureapparatus. However, since the treatment time affects a softened shape ofa resist pattern, an apparatus constitution, with which lightirradiation treatment for a predetermined time is performed, isrequired. As such an apparatus constitution, although not shown in thefigure, it is possible that, for example, a shutter mechanism isprovided, a mechanism for performing power supply to the super-highpressure mercury lamp only for a predetermined time is provided.

The cleaning chamber 238 is a treatment chamber of a spin coating systemand supplies IPA and pure water to perform rinse treatment afterexfoliation. Note that the invention is characterized in that a resistis ashed and removed under the atmospheric pressure or a pressure closeto the atmospheric pressure by the plasma treatment apparatus in thefirst and the third embodiment modes. However, depending upon a process,it is also possible that resist exfoliating liquid is supplied to removea resist in a treatment chamber of the spin coating system like thecleaning chamber 238. In the plasma treatment chamber 237, etchingtreatment and ashing treatment are performed under the atmosphericpressure or a pressure close to the atmospheric pressure.

Since the apparatus operating under the atmospheric pressure or apressure close to the atmospheric pressure is used, the invention canprovide a manufacturing apparatus that includes the ink droplet jettreatment chamber 227, the plasma treatment chamber 237, a treatmentchamber for forming a thin film, moving means that moves a head forjetting ink droplets, and the like as a unit. With the manufacturingapparatus with such a structure, inline treatment can be performed moreeasily, and reduction of a space and improvement in efficiency of amanufacturing line can be realized.

It is possible to combine the embodiment with the above-mentionedembodiment modes freely.

Embodiment 2

An embodiment of the invention will be explained using the drawings.

FIG. 9 is shows an example of a sputtering apparatus of a magnetronsystem. The apparatus has a film formation chamber 311 including aconveyance port (extraction port) 322 for extracting an object to betreated (substrate). A target 317 is provided in the film formationchamber 311 and is cooled (water-cooled) by a coolant 319 via a backingplate. A permanent magnet 318 makes it possible to form a film with highuniformity of thickness on a surface of a substrate opposed thereto bytaking a circular motion or a linear motion in a direction parallel witha target surface. A shutter 323 opens and closes before and afterstarting film formation to prevent a film from being formed in a statein which plasma is unstable in an initial period of discharge.

A substrate 313 and a mask 314 are set in substrate holding means 312 bymoving a substrate bolder 327 and a mask bolder 328. In this case, it isadvisable to perform alignment of the substrate 313 and the mask 314using a CCD camera 316 provided in the film formation chamber. Inaddition, a magnetic body (magnet) 315 is provided in the substrateholding means 312, and the substrate 313 and the mask 314 are fixed bythe magnetic body 315. In this case, a spacer may be provided to retaina fixed gap (height) such that the substrate 313 and the mask 314 do notcome into contact with each other. In addition, means for holding thetarget 317 has means 326 for moving the target 317 up and down and cancontrol a distance between the substrate 313 and the target 317 at thetime of film formation. It is needless to mention that means for movingthe substrate 313 up and down may be set in the substrate holding means312 to control the distance between the substrate 313 and the target 317at the time of film formation.

Moreover, it is advisable to embed a sheathed heater as heating means tointroduce a heated rare gas (argon gas) from the back of the substrate313 and improve a soaking property. In addition, a rare gas or an oxygengas is introduced into the film formation chamber 311 from a gasintroducing means 321, and a rectifying plate 324, which is controlledby a conductance valve 325, is provided for the purpose of rectifying aflow of a sputtering gas in the film formation chamber 311. Ahigh-frequency power supply 320 is connected to the target 317.

Subsequently, an example of a mask 330, which is used when a conductivefilm is formed by the sputtering method, is shown in FIG. 9(B). The mask314 has mask patterns 331 in a slit shape. The mask patterns 331 are setappropriately according to an application thereof, for example, a narrowpattern of 5 to 20 μm is provided for formation of a signal linearranged in a pixel portion and a wide pattern of 150 to 1000 μm isprovided for formation of wound-around wiring.

Note that auxiliary wiring may be provided in the mask 314 in parallelwith a slit for the purpose of reinforcement. Width, length, and asetting place of this auxiliary wiring only have to be set appropriatelyso as not to be an obstacle at the time of film formation. If suchauxiliary wiring is used, width of a film formation area is preventedfrom fluctuating or meandering. Such a mask 314 is formed of nickel,platinum, copper, stainless steel, quartz glass, or the like. A maskformed of a metal material is called a metal mask. Depending upon widthof wiring to be formed, it is advisable to form the mask 314 so as tohave thickness of about 5 to 25 μm.

The invention is characterized in that the mask 314 is arranged so as tobe laid on top of the substrate 313, and a thin film is formed on thesubstrate 313 in a selective manner. More specifically, high-frequencypower is applied in the atmosphere containing a rare gas to form a thinfilm of a desired shape with the sputtering method. In the case in whichthe mask 314 is arranged in this way to form a thin film of a desiredshape, although efficiency in use of a material is not improved in thesubsequent etching treatment process, it is unnecessary to apply etchingtreatment to a thin film in an area other than a place covered by aresist pattern, and the etching treatment only has to be applied to adesired place. Consequently, waste of a gas to be used at the time ofthe etching treatment is reduced, and efficiency in use of a gas isimproved. It is possible to combine this embodiment with theabove-mentioned embodiment modes and embodiment freely.

Embodiment 3

An embodiment of the invention will be explained using the drawings.

FIG. 10 shows an example of an evaporation apparatus. In FIG. 10(A),reference numeral 350 denotes a sample boat, and 351 denotes a material.The material placed in the sample boat 350 is vaporized and dischargedby resistance beating by an electrode (not shown). In this case, thedischarged material adheres on a substrate 340 after passing throughgaps of a mask 343 comprising a conductive material. As described aboveusing FIG. 9(B), the mask 343 is constituted by a conductive materialsuch as copper, iron, aluminum, tantalum, titanium, or tungsten.

Note that, in this embodiment, although the resistance heating isexplained as an evaporation source, electron beam (EB) heating may beadopted. In addition, a material may be charged to negative or positivein polarity at the time of evaporation.

FIG. 10(B) is a diagram showing an example of an evaporation apparatusof an electrification heating type that is different from FIG. 10(A).Reference numeral 370 denotes a filament and 371 denotes a crucibleformed of a material (e.g., quartz) resistible against temperaturegenerated by the filament 370. For example, the material may bestainless steel. Then, after placing a powder material in the crucible371, the filament 370 is heated by energization to evaporate thematerial in a form of atoms or molecules, and the material in a form ofatoms or molecules is, adhered to a substrate 372 to form a thin film.Note that, although a filament of a cone basket type is shown in FIG.10(B), the shape of the filament may be changed appropriately accordingto an object, and, for example, a filament of a U shape may be used.

In the case of the evaporation apparatus shown in FIG. 10(B), it isunnecessary to always use the metal mask, and a thin film can be formedin a selective manner by reducing a size of a narrow port, through whichan evaporation source is supplied, to scan the crucible 371 or thesubstrate 372.

It is possible to combine this embodiment with the above-mentionedembodiment modes and embodiments.

Embodiment 4

In this embodiment, a manufacturing process of a liquid crystal displayapparatus of an active matrix type will be hereinafter described usingFIG. 11.

First, an active matrix substrate is manufactured using a substrate 600having translucency. As a substrate size of the substrate 600, it ispreferable to use a large area substrate with a size of 600mm×720mm,680mm×880mm, 1000mm×1200mm, 1100mm×1250mm, 1150mm×1300mm, 1500mm×1800mm,1800mm×2000mm, 2000mm×2100mm, 2200mm×2600mm, or 2600mm×3100mm to reducemanufacturing cost. For example, a glass substrate of bariumborosilicate glass or alumino-borosilicate glass, which is representedby #7059 glass or #1737 glass of Corning Inc. Moreover, as othersubstrates, translucent substrates such as a quartz substrate and aplastic substrate can be used.

Note that the active matrix substrate is equivalent to a substrate withan element such as a thin film transistor formed thereover.

Note that it is preferable to create a pixel pitch according to a designrule defining both a vertical length and a horizontal length as 50 to750 μm.

First, using the sputtering method, after forming a conductive layer onthe substrate 600 having an insulating surface entirely or in aselective manner, a resist mask is formed by the ink droplet jet method,and an unnecessary part is removed by etching to form wiring andelectrodes (a gate electrode, a retention capacitor, terminals, etc.).Note that, if necessary, a base insulating film is formed on thesubstrate 600.

Note that, in the following processes, in a process in which etchingtreatment or ashing treatment for removing a resist is performed, theabove-mentioned plasma treatment apparatus operating under theatmospheric pressure or a pressure close to the atmospheric pressure maybe used. If the plasma treatment apparatus not requiring a complicatedvacuum system is used, it becomes possible to reduce cost.

As a material for the wiring and the electrodes, an element selected outof Ti, Ta, W, Mo, Cr, and Nd, an alloy containing the elements, or anitride containing the element as components may be used. Moreover, itis also possible to select two or more of the element selected out ofTi, Ta, W, Mo, Cr, and Nd, the alloy containing the element as acomponent, or the nitride containing the element as a component andstack the materials.

Note that when a screen size increases, lengths of respective pieces ofwiring increase, and a problem occurs in that a wiring resistanceincreases to cause an increase in power consumption. Thus, in order tolower the wiring resistance to realize lower power consumption, Cu, Al,Ag, Au, Fe, Ni, and Pt or an alloy of these metals can be used as amaterial for the wiring and the electrodes.

Next, a gate insulating film is formed over the entire surface with thePCVD method. The gate insulating film is formed with a film thickness of50 to 200 nm, and preferably with thickness of 150 nm using laminationof a silicon nitride film and a silicon oxide film. Note that the gateinsulating film is not limited to the lamination, and an insulating filmsuch as an silicon oxide, film, a silicon nitride film, a siliconoxynitride film, or a tantalum oxide film can also be used.

Next, a first amorphous semiconductor film is formed over the entiresurface of the gate insulating film with thickness of 50 to 200, andpreferably 100 to 150 nm, by a publicly-known method such as the plasmaCVD method and the sputtering method. Typically, an amorphous silicon(a-Si) film is formed with thickness of 100 nm. Note that a chamber isalso increased in size when a film is formed on a large area substrate.In that case, treatment time increases in order to evacuate the insideof the chamber increased in size, and a large quantity of a filmformation gas is also required. Therefore, it is advisable to performformation of an amorphous silicon film using the plasma CVD apparatusthat operates under the atmospheric pressure or a pressure close to theatmospheric pressure and has linear plasma supply means. Thus, it ispossible to form the amorphous silicon film by scanning a few times.Moreover, a film only has to be formed in a desired place, which leadsto a reduction in a film formation gas and makes it possible to reducemanufacturing cost.

Next, a second amorphous semiconductor film, which contains an impurityelement of one conductivity type (N type or P type), is formed withthickness of 20 to 80 nm. The second amorphous semiconductor filmcontaining an impurity element giving one conductivity type is formedover the entire surface with a publicly-known method such as the plasmaCVD method or the sputtering method. In this embodiment, the secondamorphous semiconductor film containing an N type impurity element isformed using a silicon target added with phosphorous.

Next, a resist mask is formed by the ink droplet jet method, and anunnecessary part is removed by etching to form a first amorphoussemiconductor film of an island shape and a second amorphoussemiconductor film of an island shape. As an etching method in thiscase, wet etching or dry etching is used.

Next, after forming a conducive layer covering the second amorphoussemiconductor film of an island shape with the sputtering method, aresist mask is formed by the ink droplet jet method, and an unnecessarypart is removed by etching to form wiring and electrodes (source wiring,a drain electrode, a capacitive electrode, etc.). As a material for thewiring and the electrodes, an element selected out of Al, Ti, Ta, W, Mo,Cr, Nd, Cu, Ag, Au, Cr, Fe, Ni, and Pt or an alloy of the elements maybe used.

Next, the resist mask is formed by the ink droplet jet method, and theunnecessary part is removed by etching to form the source wiring, thedrain electrode, and the capacitive electrode. In this case, wet etchingor dry etching is used as an etching method. At this stage, a retentioncapacitor, which has an insulating film consisting of a materialidentical with a gate insulating film as a dielectric, is formed. Then,a part of the second amorphous semiconductor film is removed in aself-aligning manner with the source wiring and the drain electrode asmasks, and a part of the first amorphous semiconductor film is thinned.The thinned area becomes a channel formation area of a TFT.

Next, a protective film comprising a silicon nitride film with thicknessof 150 nm and a first interlayer insulating film comprising a siliconoxide nitride film with thickness of 150 nm are formed over the entiresurface. Note that, when a film is formed on a large area substrate, achamber is also increased in size. In that case, treatment timeincreases in order to evacuate the inside of the chamber increased insize vacuum, and a large quantity of a film formation gas is alsorequired. Therefore, it is advisable to form an amorphous silicon filmusing a plasma CVD apparatus having linear plasma supplying means.Thereafter, hydrogenation is performed, and a TFT of a channel etch typeis manufactured.

Note that, although the example, in which a TFT structure is set as thechannel etch type, is described in this embodiment, the TFT structure isnot specifically limited, and a TFT of a channel stopper type, a TFT ofa top gate type, or a TFT of a forward stagger type may be used.

Next, a resist mask is formed by the ink droplet jet method, andthereafter, a contact hole reaching the drain electrode and thecapacitive electrode is formed by a dry etching process. In addition, itis also possible that a contact hole (not shown) for electricallyconnecting the gate wiring and terminal portions simultaneously isformed at a terminal portion, and metal wiring (not shown) connectingthe gate wiring and the terminal portion electrically is formed. Inaddition, it is also possible that a contact hole (not shown) reachingthe source wiring is formed simultaneously, and metal wiring to beconnected to the source wiring is formed. After forming the metalwiring, a pixel electrode of ITO (indium tin oxide) or the like may beformed. Alternatively, after forming a pixel electrode of ITO or thelike, the metal wiring may be formed.

Next, a transparent electrode film of ITO, In₂O₃-ZnO (indium oxide-zincoxide alloy), ZnO (zinc oxide), or the like is formed with thickness of110 nm. Thereafter, a process of forming a resist pattern with the inkdroplet jet method and an etching process are performed to form a pixelelectrode 601.

Through the above-mentioned processes, an active matrix substrateconstituted by a pixel portion, which comprises a TFT of a reversestagger type and a retention capacitor, and a terminal portion can bemanufactured.

Subsequently, an orientation film 623 is formed on an active matrixsubstrate and rubbing treatment is carried out on the orientation film623. Note that, in this embodiment, before forming the orientation film623, a columnar spacer 602 for retaining a substrate interval is formedin a desired position by patterning an organic resin film such as anacrylic resin film. In addition, a spherical spacer may be spread overthe entire surface of the substrate instead of the columnar spacer 602.The orientation film 623 may be formed by the ink droplet jet method.

Subsequently, an opposed substrate 650 is prepared. A color filter 602,in which a colored layer and a light-shielding layer are arranged inassociation with pixels, is provided in the opposed electrode 650. Inaddition, a smoothing film 651 covering this color filter 620 isprovided. Subsequently, on the smoothing film 651, an opposed electrode621 consisting of a transparent conductive film is formed in a positionoverlapping the pixel portion, an orientation film 622 is formed overthe entire surface of the opposed substrate 650 to apply the rubbingtreatment to the orientation film 622.

Then, after drawing a seal material 607 so as to surround the pixelportion on the active matrix substrate, liquid crystal is jetted to anarea surrounded by the seal material 607 by the ink droplet jet methodunder decompression. Subsequently, the active matrix substrate and theopposed substrate 605 are adhered to each other by the seal material 607under decompression without bringing the substrates into contact withthe air. A filler (not shown) is mixed in the seal material 607, and thetwo substrates are adhered to each other keeping a uniform interval withthis filler and the columnar spacer 602. By using the method of jettingliquid crystal with the ink droplet jet method, an amount of liquidcrystal used in the manufacturing process can be reduced. In particular,in the case in which a large area substrate is used, significant costreduction can be realized.

In this way, an active matrix liquid crystal display apparatus iscompleted. Then, if necessary, the active matrix substrate or theopposed substrate is divided into desired shapes. Moreover, an opticalfilm such as a polarizing plate 603 or the like is provided properlyusing a publicly-known technique. Then, an FPC is adhered using apublicly-known technique.

If a backlight 604 and a light guide plate 605 are provided in a liquidcrystal module, which is obtained by the above-mentioned processes, andcovered by a cover 606, an active matrix liquid crystal displayapparatus (transmission type), a part of a sectional view of which isshown in FIG. 11(A), is completed. Note that the cover and the liquidcrystal module are fixed using an adhesive or organic resin. Inaddition, since the active matrix liquid crystal display apparatus is atransmission type, the polarizing plate 603 is adhered to both theactive matrix substrate and the opposed substrate.

In addition, although this embodiment indicates the example of thetransmission type, the present invention is not specifically limited andliquid crystal display apparatus of a reflection type and asemi-transmission type can also be manufactured. In the case in which areflective type liquid crystal display apparatus is obtained, a metalfilm with a high light reflectivity, representatively a material filmcontaining aluminum or silver as main components, or a laminated film ofthe materials only have to be used.

Subsequently, a top view of the liquid crystal module is shown in FIG.11(B), and a top view of a liquid crystal module different from FIG.11(B) is shown in FIG. 11(C).

A TFT, in which an active layer is formed of the amorphous semiconductorfilm obtained by the embodiment, is small in a field effect mobility andcan obtain only 1cm²/Vsec. Therefore, a drive circuit for performingimage display is formed of an IC chip and is implemented by a TAB (TapeAutomated Bonding) system or a COG (Chip on glass) system.

In FIG. 11(B), reference numeral 501 denotes an active matrix substrate;506 denotes an opposed substrate; 504 denotes a display portion; 505denotes an FPC; and 507 denotes a seal material. In this embodiment,liquid crystal is jetted by the ink droplet jet method, and the pair ofsubstrates 501 and 506 are adhered to each other by the seal material507.

A TFT obtained by this embodiment is small in field effect mobility.However, in the case in which the TFT is produced in mass productionusing a large area substrate, cost for a manufacturing process can bereduced. In the case in which liquid crystal is jetted by the inkdroplet jet, method, and the pair of substrates are adhered to eachother, the liquid crystal can be held between the pair of substrateswithout regard to a substrate size. Thus, a display apparatus providedwith a liquid crystal panel having a large screen of 20 to 80 inches canbe manufactured.

In addition, in the case in which a semiconductor film having a crystalstructure obtained by performing publicly-known crystallizationtreatment to crystallize an amorphous semiconductor film,representatively, an active layer is constituted by a polysilicon layer,since a TFT with high field effect mobility is obtained, not only thepixel portion but also a drive circuit having a CMOS circuit can bemanufactured on the identical substrate. A CPU or the like can bemanufactured on the identical substrate in addition to the drivecircuit. In the case in which a TFT having an active layer consisting ofa polysilicon film is used, a liquid crystal module as in FIG. 11(C) canbe manufactured. In FIG. 11(C), reference numeral 501 denotes an activematrix substrate; 505 denotes an FPC; 506 denotes an opposed electrode;510 denotes a source driver; 508 and 509 denote gate drivers; 504denotes a pixel portion; 511 denotes a first seal material; and 512denotes a second seal member. In this embodiment, liquid crystal isjetted by the ink droplet jet method, and the pair of substrates 501 and506 are adhered to each other by the first seal material 512 and thesecond seal material 506. Note that, since liquid crystal is unnecessaryfor the drivers 508 to 510, liquid crystal is retained only in thedisplay portion 504, and the second seal material 511 is provided forreinforcement of an entire panel.

Note that, although the example in which the invention is applied to adisplay panel using a liquid crystal display element is described here,the invention may be applied to a display panel using a light-emittingelement. The light emitting element has a structure in which anelectroluminescent layer (actually, various kinds of layers such as anelectron transport layer are present, the layers are generally referredto as electroluminescent layer here) is sandwiched by the pair ofelectrodes. A method of manufacturing this electroluminescent layer withthe ink droplet jet method (e.g., ink jet method) has already been putto practical use. In other words, if a compound to be jetted from a headis changed or the head filled with a compound is replaced, consecutivetreatment becomes possible. In addition, since the light-emittingelement is a selfluminous flat display, the light-emitting element doesnot require a backlight and is not limited in terms of a view angle.Moreover, the light-emitting element is excellent in contrast andresponse speed remarkably. Therefore, it is possible to use thelight-emitting element not only as a portable terminal but also as alarge display apparatus.

It is possible to combine the embodiment with the above-mentionedembodiment modes and embodiments freely.

Embodiment 5

An embodiment of the invention will be explained using the drawings. Inthis embodiment, a process of manufacturing a thin film transistor and acapacitive element using the invention will be explained. Sectionalviews of the manufacturing process are shown in FIGS. 13 and 14, and atop view thereof is shown in FIG. 15.

A gate electrode (gate wiring) 901 and a capacitive electrode(capacitive wiring) 902 are formed over the substrate 101 (FIG. 13(A),FIG. 15A). A transparent substrate made of glass, plastics, or the likeis used as the substrate 101. In addition, the gate electrode 901 andthe capacitive electrode 902 are formed of an identical, layer. Afterstacking aluminum (Al) containing neodymium (Nd) or the like andmolybdenum (Mo), selective processing is performed locally. In thisembodiment, since the selective processing is performed, aphotolithography process using a photo mask is unnecessary, and amanufacturing process can be simplified significantly. Note that, as amaterial of the gate electrode 901 and the capacitive electrode 902,other than aluminum (Al) containing neodymium. (Nd) or the like, amaterial having conductivity such as chrome (Cr) may be used.

Next, an insulating film (gate insulating film) 903 covering the gateelectrode 901 and the capacitive electrode 902 is formed (FIG. 13(B),FIG. 15(B)). As the insulating film 903, an insulating film such assilicon nitride film or a silicon oxide film, or a film obtained bystacking the silicon nitride film, the silicon oxide film, and the likeare used.

Subsequently, a semiconductor film 904 having an amorphous structure isformed on the insulating film 903 by performing selective processinglocally. In this embodiment, since the selective processing isperformed, a photolithography process using a photo mask is unnecessary,and a manufacturing process can be simplified significantly.

Next, a protective film 905 is formed on a part to be a channel area fora TFT in the semiconductor film 904. The protective film 905 is formedby subjecting an insulating film such as a silicon nitride film to theselective processing locally.

Subsequently, an amorphous semiconductor is formed, and thereafter,phosphorous, which is an impurity element, is added to form an N typesemiconductor film (FIG. 13(C), FIG. 15(C)). Then, conductive films 908and 909, in which molybdenum (Mo), aluminum (Al), and molybdenum (Mo)are stacked in order, are formed by performing selective processinglocally. Then, the N type semiconductor layer is etched with theconductive films 908 and 909 as masks to form N type semiconductorlayers 906 and 907.

Next, a dielectric film 910 consisting of a silicon nitride film or asilicon oxide film is formed over the entire surface of the conductivefilms 908 and 909 (FIG. 13(D), FIG. 15(D)). Subsequently, a contact holepiercing through the dielectric film 910 to reach the wiring 909 isformed. In this embodiment, the contact hole is formed using the methoddescribed in the second embodiment.

Subsequently, a pixel electrode 911 is formed by subjecting atransparent conductive film such as an ITO to selective processinglocally (FIG. 15(E)).

Next, an orientation film 912 is formed on the pixel electrode 911 (FIG.14). Subsequently, after adhering an opposed substrate 918, in which theorientation film 915, the opposed electrode 916, and the light-shieldingfilm 917 are formed, to the orientation film 912, a liquid crystalmaterial 913 is injected to complete a display panel. A gap between thesubstrate 101 and the opposed substrate 918 is retained by the spacer914.

Note that, the above-mentioned manufacturing process indicates the casein which a photolithography process using a photo mask is madeunnecessary by performing the selective processing locally in all theprocesses. In addition, in this embodiment, a manufacturing process fora TFT of a so-called channel stop type is shown in the figure. However,the invention may be applied to a manufacturing process for a TFT of achannel etch type.

A transistor and a capacitive element can be formed through theabove-mentioned processes. According to this embodiment, since thetransistor and the capacitive element can be manufactured without usingthe photolithography process, a significant reduction in themanufacturing process can be realized, and a reduction in manufacturingcost can be realized.

Sixth Embodiment

In this embodiment, an example of a manufacturing procedure for alight-emitting apparatus having an EL element will be explained usingFIG. 16.

In a light-emitting mechanism for an EL element, it is said that, avoltage is applied with an organic compound layer sandwiched between apair of electrodes, whereby an electron injected from a cathodeconsisting of a material with a small work function and a hole injectedfrom an anode are recombined in a light-emitting center in an organiccompound layer to form a molecule exciton, and the molecule excitondischarges energy and emits light when returning to a ground state.Single excitation and triple excitation are known as an excitationstate, and it is considered that light emission is possible through boththe excitation states.

In a light-emitting apparatus that is formed by arranging such ELelements in a matrix shape, it is possible to use drive methods, such aspassive matrix drive (passive matrix type) and active matrix drive(active matrix type) in which a switch is provided for each pixel (ordot).

Here, an example in which only an EL element is manufactured will behereinafter explained.

First, in the case in which a light-emitting apparatus of an activematrix type is manufactured, a TFT (not shown) is manufactured on asubstrate 150 having a dielectric surface. As the TFT, an N type TFT ora P type TFT only has to be manufactured by a publicly-known method.Subsequently, a first electrode 151 to be an anode is formed so as tooverlap an electrode (not shown) of the TFT partially. Here, the firstelectrode 151 is formed by the ink jet method using a conductive filmmaterial (ITO, In₂O₃-ZnO, ZnO, etc.) with a large work function.

Subsequently, a solution containing a dielectric material is jetted in aselective manner by the ink jet method to form a partition wall (whichis called a bank, a dielectric object, a barrier, an embankment, etc.)152 a (FIG. 16(A)). The partition wall 152 a covers an end of the firstelectrode 151, wiring, and electrodes and insulates the electrodes fromeach other. As a material of the partition wall 152 a, a photosensitiveor non-photosensitive organic material (polyimide, acrylic, polyaimide,polyimide-amide, resist, or benzocyclobutene), which is obtained by theapplication method or a laminated body of these materials can be usedappropriately. In addition, as the partition wall 152 a, both a negativetype that is made insoluble with respect to an etchant and a positivetype that is made soluble with respect to the etchant by light can beused.

Subsequently, the plasma treatment is performed in a selective mannerusing the nozzle 12 (FIG. 16(B)). A shape of the partition wall isadjusted by this plasma treatment such that a curved surface having acurvature (curvature radius (0.2 μm to 3 μm)) is formed at an upper endor a lower end of the partition wall 152 b. In the case in which theshape of the partition wall is adjusted by O₂ plasma, it is preferableto also perform surface modification with O₂ plasma because the totalnumber of processes does not increase.

Subsequently, a layer 153, which contains an organic compound by the inkjet method, is formed in a selective manner on the first electrode(anode) 151. If layers containing organic objects, from which lightemission of R, G, and B can be obtained, are formed in a selectivemanner, respectively, whereby a full color display can be obtained.Moreover, a second electrode (cathode) 154 is formed on a layer 153containing an organic compound (FIG. 16(C)). It is preferable to formthe second electrode (cathode) with the ink jet method as well. Thecathode only has to be formed using a material with a small workfunction (Al, Ag, Li, Ca, or an alloy of these metals such as MgAg,MgIn, AlLi, CaF₂, or CaN). In this way, an EL element consisting of thefirst electrode (anode) 151, the layer 153 containing an organiccompound, and a second electrode (cathode) 154 is formed.

Subsequently, a protective film (not shown) is provided to seal alight-emitting element, or the light-emitting element is closed by asealing substrate (not shown) or a sealing can (not shown). By sealingthe light-emitting element, the light-emitting element can be completelyblocked from the outside, and a material facilitating deterioration ofan organic compound layer such as moisture or oxygen can be preventedfrom entering from the outside.

In addition, this embodiment indicates the example with a structure inwhich a layer containing an organic compound is formed on an anode, alight emitting element with a cathode formed on an organic compoundlayer is provided, and light emission, which has occurred in the layercontaining the organic compound, is extracted from the anode serving asa transparent electrode to the TFT (hereinafter referred to as a lowersurface emission structure). However, it is also possible that astructure is adopted in which a layer containing an organic compound isformed on an anode, and a cathode serving as a transparent electrode isformed on a layer containing an organic compound (hereinafter referredto as an upper surface emission structure).

Seventh Embodiment

Various electric appliances can be completed: using the invention.Specific examples thereof will be explained using FIG. 12.

FIG. 12(A) is a display apparatus (which is also referred to as atelevision set and a television receiver) having a large display portionof, for example, 20 to 80 inches and includes a housing 2001, a supportstand 2002, a display portion 2003, speaker portions 2004, a video inputterminal 2005, and the like. The invention is applied to manufacturingof the display portion 2003. It is preferable to manufacture such alarge display apparatus using a large substrate of a meter angle like afifth generation (1000×1200 millimeters) and a sixth generation(1400×1600 millimeters) in terms of productivity and cost.

FIG. 12(B) is a notebook personal computer, which includes a main body2201, a housing 2202, a display portion 2203, a keyboard 2204, anexternal connection port 2205, a pointing mouse 2206. The invention isapplied to manufacturing of the display portion 2203.

FIG. 12(C) is a portable image reproducing apparatus provided with arecording medium (specifically, a DVD reproduction apparatus) andincludes a main body 2401, a housing 2402, a display portion A2403, adisplay portion B2404, a recording medium (DVD, etc.) reading portion2405, an operation key 2406, a speaker portion 2407, and the like. Thedisplay portion A2403 mainly displays image information, and the displayportion B2404 mainly displays character information. However, theinvention is applied to manufacturing of the display portion A2403 andA2404.

As described above, the range of application of the invention isextremely large, and the invention can be applied to manufacturing ofelectric appliances in all fields. In addition, the invention can becombined with the above-mentioned embodiment modes and the embodiments.

Eighth Embodiment

An embodiment of the invention will be explained. More specifically, amanufacturing process for a thin film transistor to which the presentinvention is applied will be explained using FIGS. 21 to 23.

Conductive layers 801 and 802 are formed on a substrate 800 consistingof quartz, organic resin, or the like in a selective manner by a CVDmethod, an evaporation method, or a sputtering method (see, FIG. 21(A)).Next, dielectric layers 803 and 804 functioning as masks are formed onthe conductive layers 801 and 802 by an ink droplet jet method (see FIG.21(B)). In other words, a compound containing a dielectric is dischargedto form the dielectric layers 803 and 804. Subsequently, under theatmospheric pressure or a pressure close to the atmospheric pressure,the conductive layers 803 and 804 are etched by the plasma generatingmeans 805 with the dielectric layers 803 and 804 as masks to form theconductive layers 806 and 807 (see FIG. 21(C)). Next, the dielectriclayers 803 and 804 are ashed by the plasma generating means 805 underthe atmospheric pressure or a pressure close to the atmospheric pressure(see FIG. 21(D)). In other words, the dielectric layer 805 is removed.

Thereafter, a dielectric layer 808 functioning as a gate dielectricfilm, a semiconductor layer 809, and a semiconductor layer 810, to whicha one conductivity type is given, are stacked and formed on thesubstrate 800 so as to be in contact with the conductive layers 806 and807 (see FIG. 2(A)). Next, dielectric layers 811 and 812 functioning asmasks are formed on the semiconductor layer 810 by the ink droplet jetmethod. Subsequently, under the atmospheric pressure or a pressure closeto the atmospheric pressure, the semiconductor layers 809 and 810 areetched by the plasma generating means 805 with the dielectric layers 811and 812 as masks to form semiconductor layers 813 and 816 (see FIG.22(B)). Next, the dielectric layers 811 and 812 are ashed by the plasmagenerating means 805 under the atmospheric pressure or a pressure closeto the atmospheric pressure. In other words, the dielectric layers 811and 812 are removed.

Next, conductive layers 817 to 820 are formed on the substrate 800 in aselective manner by the CVD method, the evaporation method, or thesputtering method so as to be in contact with the semiconductor layers815 and 816 (see FIG. 23(A)). Subsequently, the semiconductor layers 815and 816 are etched with the conductive layers 817 to 820 as masks underthe atmospheric pressure or a pressure close to the atmospheric pressure(see FIG. 23(A)). In this case, as shown in the figure, thesemiconductor layers 813 and 814 are slightly etched. A thin filmtransistor of a channel etch type is completed through theabove-mentioned processes. This thin film transistor can use displaymeans and storing means as components.

The invention is characterized by the following four points. First,conductive layers are formed in a selective manner by the CVD method,the evaporation method, or the sputtering method; second, dielectriclayers functioning as resist masks are formed by the ink droplet jetmethod; third, the dielectric layers, semiconductor layers, and theconductive layers are etched by the plasma generating means under theatmospheric pressure or a pressure close to the atmospheric pressure;fourth, the dielectric layers functioning as resist masks are ashed bythe plasma generating means under the atmospheric pressure or a pressureclose to the atmospheric pressure.

Efficiency in use of a material is improved according to the firstcharacteristic that conductive layers are formed on a substrate in aselective manner without forming conductive layers over the entiresurface of the substrate. Similarly, efficiency in use of a material isimproved according to the second characteristic that resist masks areformed on a substrate in a selective manner without being forming overthe entire surface of the substrate. Therefore, a significant reductionof manufacturing cost is realized by the first and the secondcharacteristics. In addition, since vacuum equipment is unnecessary, areduction in a manufacturing time and a reduction of manufacturing costare realized according to the third and the fourth characteristics.Moreover, the first and the second electrodes are provided as the plasmagenerating means, the first electrode surrounds the periphery of thesecond electrode, and in the case in which plural cylindrical electrodesarranged in one axial direction, which have nozzle-like supply ports forthe gas, at tips thereof, is used, since the gas only has to be suppliedin a selective manner, improvement of efficiency in use of the gas isrealized.

1. A method for forming a semiconductor device comprising: forming afirst conductive pattern over a substrate in a selective manner;discharging a compound to selectively form a first resist pattern overthe first conductive pattern; irradiating a light on the first resistpattern; patterning the first resist pattern into a second resistpattern by development after the irradiation of the light; andpatterning the first conductive pattern into a second conductive patternby etching using the second resist pattern as a mask under anatmospheric pressure or a pressure close to the atmospheric pressure. 2.A method for forming a semiconductor device according to claim 1 whereinthe light comprises an ultraviolet ray.
 3. A method for forming asemiconductor device according to claim 1 wherein the first conductivepattern is formed using a metal mask in the selective manner.
 4. Amethod for forming a semiconductor device according to claim 1 whereinthe compound comprises a photosensitive agent.
 5. A method for forming asemiconductor device according to claim 1 wherein the light isirradiated on the first resist pattern via a photo mask.
 6. A method forforming a semiconductor device according to claim 1 wherein thesemiconductor device is incorporated into one selected from the groupconsisting of a display apparatus, a computer, and a portable imagereproducing apparatus.
 7. A method for forming a semiconductor deviceaccording to claim 1 further comprising prebaking the first resistpattern by laser irradiation before the irradiation of the light.
 8. Amethod for forming a semiconductor device according to claim 1 furthercomprising prebaking the first resist pattern by lamp anneal before theirradiation of the light.
 9. A method for forming a semiconductor devicecomprising: forming a first conductive pattern over a substrate in aselective manner; discharging a compound to selectively form a firstresist pattern over the first conductive pattern; scanning the substrateduring the discharging of the compound; irradiating a light on the firstresist pattern; patterning the first resist pattern into a second resistpattern by development after the irradiation of the light; andpatterning the first conductive pattern into a second conductive patternby etching using the second resist pattern as a mask under anatmospheric pressure or a pressure close to the atmospheric pressure.10. A method for forming a semiconductor device according to claim 9wherein the light comprises an ultraviolet ray.
 11. A method for forminga semiconductor device according to claim 9 wherein the first conductivepattern is formed using a metal mask in the selective manner.
 12. Amethod for forming a semiconductor device according to claim 9 whereinthe compound comprises a photosensitive agent.
 13. A method for forminga semiconductor device according to claim 9 wherein the light isirradiated on the first resist pattern via a photo mask.
 14. A methodfor forming a semiconductor device according to claim 9 wherein thesemiconductor device is incorporated into one selected from the groupconsisting of a display apparatus, a computer, and a portable imagereproducing apparatus.
 15. A method for forming a semiconductor deviceaccording to claim 9 further comprising prebaking the first resistpattern by laser irradiation before the irradiation of the light.
 16. Amethod for forming a semiconductor device according to claim 9 furthercomprising prebaking the first resist pattern by lamp anneal before theirradiation of the light.
 17. A method for forming a semiconductordevice comprising: forming a first conductive pattern over a substratein a selective manner; discharging a compound from a nozzle toselectively form a first resist pattern over the first conductivepattern; scanning the nozzle during the discharging of the compound;irradiating a light on the first resist pattern; patterning the firstresist pattern into a second resist pattern by development after theirradiation of the light; and patterning the first conductive patterninto a second conductive pattern by etching using the second resistpattern as a mask under an atmospheric pressure or a pressure close tothe atmospheric pressure.
 18. A method for forming a semiconductordevice according to claim 17 wherein the light comprises an ultravioletray.
 19. A method for forming a semiconductor device according to claim17 wherein the first conductive pattern is formed using a metal mask inthe selective manner.
 20. A method for forming a semiconductor deviceaccording to claim 17 wherein the compound comprises a photosensitiveagent.
 21. A method for forming a semiconductor device according toclaim 17 wherein the light is irradiated on the first resist pattern viaa photo mask.
 22. A method for forming a semiconductor device accordingto claim 17 wherein the semiconductor device is incorporated into oneselected from the group consisting of a display apparatus, a computer,and a portable image reproducing apparatus.
 23. A method for forming asemiconductor device according to claim 17 further comprising prebakingthe first resist pattern by laser irradiation before the irradiation ofthe light.
 24. A method for forming a semiconductor device according toclaim 17 further comprising prebaking the first resist pattern by lampanneal before the irradiation of the light.